Enhanced RF Characteristics of a 0.5 μm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology

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H. J. Saavedra-Gómez
J. R. Loo-Yau
Juan Luis del Valle-Padilla
P. Moreno
F. Sandoval-Ibarra
J. A. Reynoso-Hernández

Abstract

In this work a technique to heighten the breakdown voltage and the transition frequency (fT) in standard MOStechnology is presented. By using an optimized extended drift region at the drain, a CMOS FET can achieve higherbreakdown voltage. To enhance the operation frequency, the standard analog/digital pads were modified to decreasecoupling effects with the substrate. These two enhancements make the proposed MOSFET structure suitable for midpowerRF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdownvoltage of 20 V, IP3 of +30.2 dBm and an improvement of 31.9% and 34.7% of the extrinsic fT and fmax, respectively.

 

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How to Cite
Saavedra-Gómez, H. J., Loo-Yau, J. R., del Valle-Padilla, J., Moreno, P., Sandoval-Ibarra, F., & Reynoso-Hernández, J. A. (2014). Enhanced RF Characteristics of a 0.5 μm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology. Journal of Applied Research and Technology, 12(3). https://doi.org/10.1016/S1665-6423(14)71627-X