Enhanced RF Characteristics of a 0.5 ?m High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology

Abstract

In this work a technique to heighten the breakdown voltage and the transition frequency (fT) in standard MOStechnology is presented. By using an optimized extended drift region at the drain, a CMOS FET can achieve higherbreakdown voltage. To enhance the operation frequency, the standard analog/digital pads were modified to decreasecoupling effects with the substrate. These two enhancements make the proposed MOSFET structure suitable for midpowerRF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdownvoltage of 20 V, IP3 of +30.2 dBm and an improvement of 31.9% and 34.7% of the extrinsic fT and fmax, respectively.